Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

93-98

DOI:

10.4028/www.scientific.net/SSP.32-33.93

Citation:

F. Gaiseanu et al., "Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions", Solid State Phenomena, Vols. 32-33, pp. 93-98, 1993

Online since:

December 1993

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$35.00

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