Gettering in Silicon under Vacancy Generation Conditions
p.71
p.71
Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers
p.77
p.77
Defect Engineering in Erbium-Doped Silicon Structure Technology
p.83
p.83
PN Junction Formation by Two Steps Annealing
p.89
p.89
Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions
p.93
p.93
Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile
p.99
p.99
On the Interaction of Transition Metals with Silicon Grain Boundaries
p.105
p.105
Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma
p.111
p.111
Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
p.117
p.117
Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions
Abstract:
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Periodical:
Solid State Phenomena (Volumes 32-33)
Pages:
93-98
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Online since:
December 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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