Gettering in Silicon under Vacancy Generation Conditions

Abstract:

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

71-76

DOI:

10.4028/www.scientific.net/SSP.32-33.71

Citation:

N. T. Bagraev et al., "Gettering in Silicon under Vacancy Generation Conditions", Solid State Phenomena, Vols. 32-33, pp. 71-76, 1993

Online since:

December 1993

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Price:

$35.00

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