Paper Titles

Mechanisms of Transition Metal Gettering in Silicon
p.57

Gettering in Silicon under Vacancy Generation Conditions
p.71

Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers
p.77

Defect Engineering in Erbium-Doped Silicon Structure Technology
p.83

PN Junction Formation by Two Steps Annealing
p.89

Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions
p.93

Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile
p.99

On the Interaction of Transition Metals with Silicon Grain Boundaries
p.105

Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma
p.111

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33PN Junction Formation by Two Steps Annealing

PN Junction Formation by Two Steps Annealing

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.89

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Online since:

December 1993

Authors:

Chin Sheng Chen, Chiufeng Lin, M.C. He, De Ren Yang, Duan Lin Que

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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