Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

117-122

DOI:

10.4028/www.scientific.net/SSP.32-33.117

Citation:

H.P. Zeindl et al., "Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE ", Solid State Phenomena, Vols. 32-33, pp. 117-122, 1993

Online since:

December 1993

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