Paper Titles

Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
p.213

EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon
p.219

Investigation of Deep Levels and Carrier Dynamics in SiC Films
p.225

Process-Induced Defects in Silicon Technology
p.231

Lattice Defects Induced in Si_1-xGe_x Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics
p.247

Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide
p.253

Dopant Migration Caused by Point Defect Gradients
p.259

Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory
p.269

Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon
p.273

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Lattice Defects Induced in Si1-xGex Diodes by...

Lattice Defects Induced in Si_1-xGe_x Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

247-252

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.247

Citation:

Cite this paper

Online since:

December 1993

Authors:

H. Ohyama, Jan Vanhellemont, Jef Poortmans, Matty Caymax, Paul Clauws

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: