Application of Hydrosol to Aerosol Based Metrology to Predict Wafer Defects from Process Chemical Contamination

Derek Oberreit; Gary Van Schooneveld; Ali Altun; Michael Walker; Hans Mizusugi

doi:10.4028/p-CiXeA0

Paper Titles

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Methods for Uniform Wet Etching in Narrow Trenches and Vias
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Application of Hydrosol to Aerosol Based Metrology to Predict Wafer Defects from Process Chemical Contamination
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HomeSolid State PhenomenaSolid State Phenomena Vol. 346Application of Hydrosol to Aerosol Based Metrology...

Application of Hydrosol to Aerosol Based Metrology to Predict Wafer Defects from Process Chemical Contamination

Abstract:

A method for continuous measurement of particle and particle precursor material in high purity liquids using aerosolization and condensation particle courting (A+CPC) is presented. A process for correlating wafter defects with the concentration values measured using A+CPC using Sequential Spin Coating + Surface Enhanced Particle Sizing (SSC + SEPS) is described. The method was applied to monitor the rinsate of an ion exchange resin following the SEMI C93 guide. The results showed correlation between the methods and the concentration values were used to calculate a deposition factor (liquid concentration/surface concentration) on the order of 1E5 (#/ml)/(#/cm²).

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

157-163

DOI:

https://doi.org/10.4028/p-CiXeA0

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Online since:

August 2023

Authors:

Derek Oberreit*, Gary Van Schooneveld, Ali Altun, Michael Walker, Hans Mizusugi

Keywords:

Analytical Methods, Instrumentation, Liquid-Borne Particles, Metrology, Non-Volatile Residue, Particle Precursors

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