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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Reactive Ion Etching Characterization of a-Si:H...

Reactive Ion Etching Characterization of a-Si:H and a-SiC:H Thin Films

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

347-354

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.347

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Online since:

July 1995

Authors:

S. La Monica, G. Saggio

Keywords:

Amorphous Semiconductor, Dry Etching

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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