Reactive Ion Etching Characterization of a-Si:H and a-SiC:H Thin Films

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Periodical:

Solid State Phenomena (Volumes 44-46)

Edited by:

Hans Neber-Aeschbacher

Pages:

347-354

DOI:

10.4028/www.scientific.net/SSP.44-46.347

Citation:

S. La Monica and G. Saggio, "Reactive Ion Etching Characterization of a-Si:H and a-SiC:H Thin Films", Solid State Phenomena, Vols. 44-46, pp. 347-354, 1995

Online since:

July 1995

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$35.00

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