Reactive Ion Etching Characterization of a-Si:H and a-SiC:H Thin Films
p.347
p.347
Hydrogenated Amorphous Silicon Multilayer Structures: Classical and Quantum Electron Phenomena
p.355
p.355
Amorphous Hydrogenated Silicon-Germanium Alloys
p.365
p.365
Hydrogenated Amorphous Silicon Based Alloy: a-Si1-xCx:H
p.385
p.385
Recent Progress in Hydrogenated Amorphous Germanium and Its Alloys
p.425
p.425
Photoconductivity in Hydrogenated Amorphous Silicon
p.463
p.463
Persistent Photoconductivity in Hydrogenated Amorphous Silicon
p.475
p.475
Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?
p.495
p.495
Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors
p.505
p.505
Recent Progress in Hydrogenated Amorphous Germanium and Its Alloys
Abstract:
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Periodical:
Solid State Phenomena (Volumes 44-46)
Pages:
425-462
Citation:
Online since:
July 1995
Authors:
Keywords:
Acceptors (Boron, Aluminum, Indium, Gallium, Carbon, Silicon, Tin), Activated Transport, Ambipolar Diffusion Length, Barriers, Defect Absorption, Density of States (DOS), Differential Conductivity, Donors ( Nitrogen, Phophorus, Oxygen, Sulfur), Glow Discharge Decomposition PCVD, Hopping Conduction, Hydrogen Evolution, Hydrogen Incorporation, Hydrogenated Amorphous Germanium (a-Ge:H), Infrared Spectroscopy, Magnetron Sputtering, Metastability, Mobility Gap, Multilayer, Optical Gap, Photoconductivity, Refractive Index, Temperature Dependence Properties, Urbach Energy
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Сopyright:
© 1995 Trans Tech Publications Ltd. All Rights Reserved
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