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Paper Titles
The Nature of the Band Gap in Amorphous Si:H
p.669
The Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:H
p.677
Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H
p.685
Hydrogen Influence of Thermally Induced Metastability in Amorphous Silicon
p.695
Light-Induced Effects in a-Si:H and a-Si1-xNx:H
p.705
The Role of the Light Exposure on the Defect Formation of a-Si:H
p.715
Simulations of Defect Formation Processes in Hydrogenated Amorphous Silicon
p.723
Optically Detected Magnetic Resonance in a-Si:H
p.731
Recombination via Defect Complexes in Hydrogenated Amorphous Silicon
p.765

Light-Induced Effects in a-Si:H and a-Si1-xNx:H

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

705-714

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.705

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Online since:

July 1995

Authors:

T. Shimizu, M. Kumeda

Keywords:

Bond Breaking, Carrier Capture, Hydrogenated Amorphous Silicon, Light-Induced Effects

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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