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Paper Titles
Determinaton of Localized-State Distributions from Transient Photoconductivity Data
p.647
One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon
p.657
The Nature of the Band Gap in Amorphous Si:H
p.669
The Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:H
p.677
Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H
p.685
Hydrogen Influence of Thermally Induced Metastability in Amorphous Silicon
p.695
Light-Induced Effects in a-Si:H and a-Si1-xNx:H
p.705
The Role of the Light Exposure on the Defect Formation of a-Si:H
p.715
Simulations of Defect Formation Processes in Hydrogenated Amorphous Silicon
p.723

Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

685-694

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.685

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Online since:

July 1995

Authors:

A. Kondo, K. Shimakawa, K. Hayashi, S. Akahori, D. Kato, M. Moriguchi, S.R. Elliott

Keywords:

Amorphous Chalcogenides, Hydrogenated Amorphous Silicon, Light-Induced Metastable Defects, Mechanisms of Metastability, Photoconductivity

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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