Properties of Hot Carriers in a-Si:H in Comparison to a-Se
p.551
p.551
Short Range Order and Atomic Charge Distribution in Amorphous Silicon
p.559
p.559
Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
p.573
p.573
Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
p.597
p.597
Determinaton of Localized-State Distributions from Transient Photoconductivity Data
p.647
p.647
One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon
p.657
p.657
The Nature of the Band Gap in Amorphous Si:H
p.669
p.669
The Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:H
p.677
p.677
Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H
p.685
p.685
Determinaton of Localized-State Distributions from Transient Photoconductivity Data
Abstract:
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Periodical:
Solid State Phenomena (Volumes 44-46)
Pages:
647-656
Citation:
Online since:
July 1995
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© 1995 Trans Tech Publications Ltd. All Rights Reserved
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