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Paper Titles
Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors
p.505
Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products
p.525
Electronic DC Transport in a-Si:H
p.535
Properties of Hot Carriers in a-Si:H in Comparison to a-Se
p.551
Short Range Order and Atomic Charge Distribution in Amorphous Silicon
p.559
Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
p.573
Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
p.597
Determinaton of Localized-State Distributions from Transient Photoconductivity Data
p.647
One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon
p.657

Short Range Order and Atomic Charge Distribution in Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

559-572

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.559

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Online since:

July 1995

Authors:

S. Kugler

Keywords:

Atomic Charge, Charge Fluctuation, Hydrogenated Amorphous Silicon, Short Range Order (SRO), Structure

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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