Paper Titles

Persistent Photoconductivity in Hydrogenated Amorphous Silicon
p.475

Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?
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Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors
p.505

Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products
p.525

Electronic DC Transport in a-Si:H
p.535

Properties of Hot Carriers in a-Si:H in Comparison to a-Se
p.551

Short Range Order and Atomic Charge Distribution in Amorphous Silicon
p.559

Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
p.573

Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
p.597

HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Electronic DC Transport in a-Si:H

Electronic DC Transport in a-Si:H

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

535-550

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.535

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Online since:

July 1995

Authors:

Harald Overhof

Keywords:

Conductivity, Extended States Conduction, Hopping Conductivity, Long-Ranged Random Potential, Meyer-Neldel Rule, Thermoelectric Power

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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