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Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
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Determinaton of Localized-State Distributions from Transient Photoconductivity Data
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One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Applications of the Modulated Photocurrent...

Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

597-646

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.597

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Online since:

July 1995

Authors:

J.P. Kleider, C. Longeaud

Keywords:

Dangling Bond, Defect-Pool, Density of States (DOS), Doping, Light Soaking, Modulated Photocurrents, Recombination

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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