Paper Titles

Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products
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Electronic DC Transport in a-Si:H
p.535

Properties of Hot Carriers in a-Si:H in Comparison to a-Se
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Short Range Order and Atomic Charge Distribution in Amorphous Silicon
p.559

Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
p.573

Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
p.597

Determinaton of Localized-State Distributions from Transient Photoconductivity Data
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One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon
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The Nature of the Band Gap in Amorphous Si:H
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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Steady-State Optical Modulation Spectroscopy of...

Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

573-596

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.573

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Online since:

July 1995

Authors:

H. Herremans

Keywords:

Dangling Bond, Defect States, Doping, Optical Modulaton Spectroscopy, Photoinduced Absorption

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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