Paper Titles

Short Range Order and Atomic Charge Distribution in Amorphous Silicon
p.559

Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
p.573

Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
p.597

Determinaton of Localized-State Distributions from Transient Photoconductivity Data
p.647

One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon
p.657

The Nature of the Band Gap in Amorphous Si:H
p.669

The Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:H
p.677

Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H
p.685

Hydrogen Influence of Thermally Induced Metastability in Amorphous Silicon
p.695

HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46One-Electron Theory of Defect States in Amorphous...

One-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Hydrogenated Amorphous Silicon

Info:

Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

657-668

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.657

Citation:

Cite this paper

Online since:

July 1995

Authors:

C.Y. Fong, L.H. Yang

Keywords:

Acceptor States, Amorphous Silicon, Dangling Bond States, Donor State, Hydrogenated Amorphous Silicon, Impurity-Dangling Bond Complexes, Weak Bond

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: