Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?
p.495
p.495
Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors
p.505
p.505
Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products
p.525
p.525
Electronic DC Transport in a-Si:H
p.535
p.535
Properties of Hot Carriers in a-Si:H in Comparison to a-Se
p.551
p.551
Short Range Order and Atomic Charge Distribution in Amorphous Silicon
p.559
p.559
Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
p.573
p.573
Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
p.597
p.597
Determinaton of Localized-State Distributions from Transient Photoconductivity Data
p.647
p.647
Properties of Hot Carriers in a-Si:H in Comparison to a-Se
Abstract:
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Periodical:
Solid State Phenomena (Volumes 44-46)
Pages:
551-558
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Online since:
July 1995
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© 1995 Trans Tech Publications Ltd. All Rights Reserved
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