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Recombination via Defect Complexes in Hydrogenated Amorphous Silicon

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Abstract:

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

765-774

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.765

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Cite this paper

Online since:

July 1995

Authors:

I.P. Zvyagin

Keywords:

Dangling Bond Complexes, Light-Induced Defects, Photoconductivity, Recombination, Tunneling

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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