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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Effects of Trapping in a-Si:H Diodes

Effects of Trapping in a-Si:H Diodes

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

957-972

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.957

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Online since:

July 1995

Authors:

H. Wieczorek

Keywords:

Diode, Image Sensor, Injection, Noise, Photocurrent, Recombination, Transient Effects, Trapping

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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