Paper Titles

Oxygen Aggregation Phenomena in Silicon
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New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
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Hydrogen Passivation of Double Donors in Silicon
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Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si
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New Infrared Bands in Neutron-Irradiated Si
p.281

Iron Group Impurities in Semiconducting Iron Disilicide
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Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study
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Influence of Point Defects on Defect Formation in Si:Er
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The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48New Infrared Bands in Neutron-Irradiated Si

New Infrared Bands in Neutron-Irradiated Si

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

281-286

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.281

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Online since:

July 1995

Authors:

Charalamos A. Londos, G.I. Georgiou, L.G. Fytros, N. Sarlis

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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