Paper Titles

Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
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Point Defects in Semiconductors - Then and Now
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Oxygen Aggregation Phenomena in Silicon
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New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
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Hydrogen Passivation of Double Donors in Silicon
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Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si
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New Infrared Bands in Neutron-Irradiated Si
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Iron Group Impurities in Semiconducting Iron Disilicide
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Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Hydrogen Passivation of Double Donors in Silicon

Hydrogen Passivation of Double Donors in Silicon

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

267-274

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.267

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Online since:

July 1995

Authors:

Yu.V. Martynov, I.S. Zevenbergen, T. Gregorkiewicz, C.A.J. Ammerlaan

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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