SiC Buried Layer Formation Induced by Ion Implantation
p.211
p.211
The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
p.217
p.217
Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation
p.223
p.223
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
p.229
p.229
Point Defects in Semiconductors - Then and Now
p.237
p.237
Oxygen Aggregation Phenomena in Silicon
p.247
p.247
New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
p.259
p.259
Hydrogen Passivation of Double Donors in Silicon
p.267
p.267
Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si
p.275
p.275
Point Defects in Semiconductors - Then and Now
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
237-246
Citation:
Online since:
July 1995
Authors:
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Сopyright:
© 1996 Trans Tech Publications Ltd. All Rights Reserved
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