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The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
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Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation
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Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
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Point Defects in Semiconductors - Then and Now
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Critical Conditions for the Generation of the...

Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

223-228

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.223

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Online since:

July 1995

Authors:

F. Gaiseanu

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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