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Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
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Interactions between Dopants and End-of-Range Defects in Silicon
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Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
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SiC Buried Layer Formation Induced by Ion Implantation
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Interactions between Dopants and End-of-Range...

Interactions between Dopants and End-of-Range Defects in Silicon

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

195-204

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.195

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Online since:

July 1995

Authors:

A. Claverie, Caroline Bonafos, A. Martinez, Daniel Alquier

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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