Paper Titles

External Gettering for Multicrystalline Silicon Wafers
p.153

Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications
p.165

Gettering of Au in Heat Treated Si/SiGe/Si Structures
p.171

Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers
p.177

Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
p.183

Interactions between Dopants and End-of-Range Defects in Silicon
p.195

Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
p.205

SiC Buried Layer Formation Induced by Ion Implantation
p.211

The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
p.217

HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Defect Engineering for Silicon-on-Insulator, MeV...

Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

183-194

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.183

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Online since:

July 1995

Authors:

Sergei V. Koveshnikov, Anant K. Agarwal, K.L. Beaman, George A. Rozgonyi

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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