Paper Titles

Diameter Effects on Grown-In Defects in CZ Crystal Growth
p.107

Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices
p.115

Multicrystalline Silicon for Solar Cells
p.127

Room Temperature UHV Silicon Direct Bonding
p.143

External Gettering for Multicrystalline Silicon Wafers
p.153

Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications
p.165

Gettering of Au in Heat Treated Si/SiGe/Si Structures
p.171

Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers
p.177

Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
p.183

HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48External Gettering for Multicrystalline Silicon...

External Gettering for Multicrystalline Silicon Wafers

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VI

Info:

Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

153-164

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.153

Citation:

Cite this paper

Online since:

July 1995

Authors:

Santo Martinuzzi, Isabelle Périchaud

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: