Paper Titles

Building the Electron Superhighway: Back-End Processing and Simulation
p.45

Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon
p.57

Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era
p.65

Expected Limits for Manufacturing Very Large Silicon Wafers
p.97

Diameter Effects on Grown-In Defects in CZ Crystal Growth
p.107

Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices
p.115

Multicrystalline Silicon for Solar Cells
p.127

Room Temperature UHV Silicon Direct Bonding
p.143

External Gettering for Multicrystalline Silicon Wafers
p.153

HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Diameter Effects on Grown-In Defects in CZ Crystal...

Diameter Effects on Grown-In Defects in CZ Crystal Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VI

Info:

Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

107-114

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.107

Citation:

Cite this paper

Online since:

July 1995

Authors:

F. Uberti, K. Hagimoto

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: