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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Silicon Carbide - A Promising Wide-Band-Gap...

Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

115-126

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.115

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Online since:

July 1995

Authors:

Gerhard Pensl, T. Troffer

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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