Paper Titles

Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
p.183

Interactions between Dopants and End-of-Range Defects in Silicon
p.195

Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
p.205

SiC Buried Layer Formation Induced by Ion Implantation
p.211

The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
p.217

Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation
p.223

Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
p.229

Point Defects in Semiconductors - Then and Now
p.237

Oxygen Aggregation Phenomena in Silicon
p.247

HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48The Mechanisms and Application of Dislocation...

The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

217-222

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.217

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Online since:

July 1995

Authors:

E.A. Steinman, Vitaly V. Kveder, Hermann G. Grimmeiss

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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