Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

229-236

DOI:

10.4028/www.scientific.net/SSP.47-48.229

Citation:

J. Vanhellemont et al., "Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments", Solid State Phenomena, Vols. 47-48, pp. 229-236, 1996

Online since:

July 1995

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Price:

$35.00

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