Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
p.205
p.205
SiC Buried Layer Formation Induced by Ion Implantation
p.211
p.211
The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
p.217
p.217
Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation
p.223
p.223
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
p.229
p.229
Point Defects in Semiconductors - Then and Now
p.237
p.237
Oxygen Aggregation Phenomena in Silicon
p.247
p.247
New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
p.259
p.259
Hydrogen Passivation of Double Donors in Silicon
p.267
p.267
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
229-236
Citation:
Online since:
July 1995
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Сopyright:
© 1996 Trans Tech Publications Ltd. All Rights Reserved
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