New Infrared Bands in Neutron-Irradiated Si
p.281
p.281
Iron Group Impurities in Semiconducting Iron Disilicide
p.287
p.287
Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study
p.293
p.293
Influence of Point Defects on Defect Formation in Si:Er
p.299
p.299
The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
p.307
p.307
Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures
p.313
p.313
DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
p.319
p.319
DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
p.327
p.327
Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
p.353
p.353
The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
307-312
Citation:
Online since:
July 1995
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© 1996 Trans Tech Publications Ltd. All Rights Reserved
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