Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

353-358

DOI:

10.4028/www.scientific.net/SSP.47-48.353

Citation:

A. Correia et al., "Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation", Solid State Phenomena, Vols. 47-48, pp. 353-358, 1996

Online since:

July 1995

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$35.00

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