Paper Titles

The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
p.307

Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures
p.313

DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
p.319

DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
p.327

Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
p.353

Structural and Electrical Properties of NiSi₂ Particles in Silicon
p.359

Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
p.365

Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
p.371

A Study of Defects Generated by BF₂⁺ Implantation in Silicon Crystals and Their Annealing
p.377

HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Copper Precipitation in Monocrystalline Silicon:...

Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VI

Info:

Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

353-358

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.353

Citation:

Cite this paper

Online since:

July 1995

Authors:

A. Correia, A. Boutry-Forveille, D. Ballutaud

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: