Paper Titles

DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
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DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
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Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
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Structural and Electrical Properties of NiSi₂ Particles in Silicon
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Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
p.365

Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
p.371

A Study of Defects Generated by BF₂⁺ Implantation in Silicon Crystals and Their Annealing
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Surface Damage Induced by Reactive Ion Etching in n- Type Silicon
p.383

The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts
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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48Contrastive Recombination Behaviour of Metal...

Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

365-370

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.365

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Online since:

July 1995

Authors:

Winfried Seifert, Martin Kittler, Michael Seibt, A. Buczkowski

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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