Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study
p.293
p.293
Influence of Point Defects on Defect Formation in Si:Er
p.299
p.299
The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
p.307
p.307
Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures
p.313
p.313
DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
p.319
p.319
DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
p.327
p.327
Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
p.353
p.353
Structural and Electrical Properties of NiSi2 Particles in Silicon
p.359
p.359
Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
p.365
p.365
DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
Abstract:
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Periodical:
Solid State Phenomena (Volumes 47-48)
Pages:
319-326
Citation:
Online since:
July 1995
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Сopyright:
© 1996 Trans Tech Publications Ltd. All Rights Reserved
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