DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

319-326

DOI:

10.4028/www.scientific.net/SSP.47-48.319

Citation:

A. A. Istratov and O.F. Vyvenko, "DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities", Solid State Phenomena, Vols. 47-48, pp. 319-326, 1996

Online since:

July 1995

Export:

Price:

$35.00

In order to see related information, you need to Login.