Paper Titles

Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates
p.553

Determination of Interface Structure and Bonding by Z-Contrast STEM
p.561

Tomographic Atom Probe: A New Tool for Nanoscale Characterisation
p.573

PHOTO-EDSR in Plastically Deformed p-Si
p.583

Cyclotron Resonance in Heavily Doped Silicon Quantum Wells
p.589

TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si_1-xGe_x Layers Grown with Molecular Beam Epitaxy
p.595

Measurements of Diffusion Length in Si-SiGe Structures
p.601

Determination of Subgap-Asorption in μc-Si:H Films by CPM
p.607

An Analysis of Residual Strain in Dry Etched Semiconductor Nanostructures
p.613

HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48TEM Analysis of Structure Modification Induced by...

TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si_1-xGe_x Layers Grown with Molecular Beam Epitaxy

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VI

Info:

Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

595-600

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.595

Citation:

Cite this paper

Online since:

July 1995

Authors:

E. Bugiel, S. Ruvimov, H.J. Osten

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: