TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si1-xGex Layers Grown with Molecular Beam Epitaxy

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

595-600

DOI:

10.4028/www.scientific.net/SSP.47-48.595

Citation:

E. Bugiel et al., "TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si1-xGex Layers Grown with Molecular Beam Epitaxy", Solid State Phenomena, Vols. 47-48, pp. 595-600, 1996

Online since:

July 1995

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$35.00

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