• Registration Log In
  • For Libraries
  • For Publication
  • Open Access
  • Downloads
  • About Us
  • Contact Us
For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Preface
Atomic Structure and Properties of Extended Defects in Silicon
p.3
Electrical Activity of Tilt and Twist Grain Boundaries in Silicon
p.15
Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries
p.21
Impurity Effect on the Dislocation DLTS Spectrum in Silicon
p.27
Formation and Annihilation of New Donors in Ribbon Growth on Substrate Silicon
p.33
Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
p.39
Grain Boundary Effects in Ionic and Mixed Conductors
p.45
Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current
p.57
HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Preface

Preface

Article Preview
Article Preview
Article Preview

Abstract:

By email View Pdf
You might also be interested in these eBooks
Polycrystalline Semiconductors V View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 67-68)

Online since:

April 1999

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Related Articles
Citation
Add To Cart

Paper price:

After payment, you will receive an email with instructions and a link to download the purchased paper.

You may also check the possible access via personal account by logging in or/and check access through your institution.

Back
Add To Cart

This paper has been added to your cart

Back To Cart
  • For Libraries
  • For Publication
  • Insights
  • Downloads
  • About Us
  • Policy & Ethics
  • Contact Us
  • Imprint
  • Privacy Policy
  • Sitemap
  • All Conferences
  • All Special Issues
  • All News
  • Open Access Partners

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.