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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Electrical Properties of Oxygen Precipitates...

Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing

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Abstract:

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Polycrystalline Semiconductors V

Info:

Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

39-44

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.39

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Online since:

April 1999

Authors:

Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini

Keywords:

Deep Level, Deep Level Transient Spectroscopy, Oxygen Precipitates, Silicon, Thermal Treatment

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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