Preface
Atomic Structure and Properties of Extended Defects in Silicon
p.3
p.3
Electrical Activity of Tilt and Twist Grain Boundaries in Silicon
p.15
p.15
Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries
p.21
p.21
Impurity Effect on the Dislocation DLTS Spectrum in Silicon
p.27
p.27
Formation and Annihilation of New Donors in Ribbon Growth on Substrate Silicon
p.33
p.33
Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
p.39
p.39
Grain Boundary Effects in Ionic and Mixed Conductors
p.45
p.45
Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current
p.57
p.57
Atomic Structure and Properties of Extended Defects in Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 67-68)
Pages:
3-14
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Online since:
April 1999
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© 1999 Trans Tech Publications Ltd. All Rights Reserved
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