Paper Titles

EBIC/XPS Study of the Antimony Equilibrium Segregation at Germanium Surface
p.289

Luminescence Studies on In_xGa_1-xN/GaN Multiple Quantum Wells by Selective Excitation Spectroscopy
p.297

Cathodoluminescence of the Composite Nanoscale Dendrite - Like GaAs-Ge Epitaxial Heterostructure
p.301

SEM-Motion Picture System Observation of Moving High-Field Domains in Semi-Insulating GaAs
p.307

Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
p.313

Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs
p.319

Secondary Electron Emission Induced by Deep Level Defects in GaAs
p.325

Interaction of Copper and Sulfur with Dislocations in GaAs
p.331

Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry
p.341

HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Abnormal Redistribution of S Atoms Implanted into...

Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping

Article Preview

Abstract:

You might also be interested in these eBooks

Beam Injection Assessment of Microstructures in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

313-318

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.313

Citation:

Cite this paper

Online since:

April 2001

Authors:

Katsuhiro Yokota, Youji Tachino, Shinya Shimizu, Kazuhiro Nakamura, Yukihira Sekine, Masanori Watanabe, Hideto Takano

Keywords:

Annealing, Distribution, Gallium Arsenide, Implantation, Silicon, Sulfur

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: