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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Impact of Lattice Defects on Device Performance of...

Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

319-324

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.319

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Online since:

April 2001

Authors:

K. Kobayashi, H. Ohyama, T. Hakata, T. Kudou, K. Shigaki, H. Takizawa, S. Kohiki, Y. Uwatoko

Keywords:

AlGaAs/GaAs p-HEMT, Induced Electron Capture Levels, Non-Ionizing Energy Loss, Number of Knock-on Atoms, Radiation Damage

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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