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Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
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Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs
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Secondary Electron Emission Induced by Deep Level Defects in GaAs
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Interaction of Copper and Sulfur with Dislocations in GaAs
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Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry
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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Secondary Electron Emission Induced by Deep Level...

Secondary Electron Emission Induced by Deep Level Defects in GaAs

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

325-330

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.325

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Online since:

April 2001

Authors:

F. Iwase, Yoshikazu Hayashi

Keywords:

Deep Level, Defect, Dopant, GaAs, Ion Implantation, Secondary Electron Emission, Semiconductor, Silicon, Temperature Dependence, Vacancy

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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