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HomeSolid State PhenomenaSolid State Phenomena Vol. 93Characterization of Polycrystalline GaN Layers...

Characterization of Polycrystalline GaN Layers Grown on Alkali-Metal-Free Glass Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance Plasma

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Polycrystalline Semiconductors VII

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Solid State Phenomena (Volume 93)

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307-312

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.307

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Online since:

June 2003

Authors:

T. Yodo, Toshiyuki Hirano, Yasunori Harada

Keywords:

Alkali-Metal-Free Glass Substrate, Electron Cyclotron Resonance Plasma, Gallium Nitride (GaN), Molecular Beam Epitaxy

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Liu, A. C. Frenkel, J. G. Kim and R. M. Park, J. Appl. Phys. 74, 6124 (1993).

[2] R. J. Molnar, R. Singh and T. D. Moustakas, Appl. Phys. Lett. 66, 268 (1995).

[3] O. Brandt, H. Yang, A. Tampert, J. Mullhauser and K. H. Ploog, Mater. Sci. Eng. B 43, 215 (1997).

[4] S. Nakamura, Y. Harada and M. Seno, Appl. Phys. Lett. 58, 2021 (1991).

[5] C. F. Lin, H. C. Cheng, G. C. Chi, M. S. Feng, J. D. Guo, J. Minghaung Hong and C. Y. Chen, J. Appl. Phys. 82, 2378 (1997).

[6] A. Hashimoto, Y. Aiba, T. Mochizuki, M. Ohkubo and A. Yamamoto, J. Cryst. Growth 175/176, 129 (1997).

[7] T.Yodo, H. Tsuchiya, H. Ando and Y. Harada, Jpn. J. Appl. Phys. 5A, 2523(2000).

[8] Tokuo Yodo, Hironori Ando, Daiki Nosei, Jyunya Seko, Kentarou Sakai, Masakazu Shimeno, Yoshiyuki Harada: J. Cryst. Growth 233, 22(2001). 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 20 40 60 80 100 120 1000/T (K-1 ) Fig. 7: Arrehenius plot of the reciprocal numbers of near band-edge emission intensities of PL spectra at 8.5 K from GaN layer grown on alkali metal-free glass substrate as a function of 1000/T. GaN/alkali-free glass TG=500 o C Ga 2.5x10-7 Torr T=8.5 K I(T) -1 (arb. units) I(T)=I0/[1+Cexp(-Eb/kBT)] C=77+15, Eb=27+3 meV, I0=17 --

[9] D. J. As, F. Schmilgus, C. Wang, B. Schikora, and K. Lischka, Appl. Phys. Lett. 70, 1311(1997).