Local Electrical Properties of Non-Doped Polycrystalline Silicon Thin-Films Evaluated Using Conductive Atomic Force Microscopy

Yoichiro Aya; Atsushi Andoh; Satoshi Yamasaki; Kenichiro Wakisaka

doi:10.4028/www.scientific.net/SSP.93.339

Paper Titles

Properties of Polycrystalline Cu₂O Thin-Films Doped with N or Si as an Acceptor Dopant
p.313

Electronic Surface Properties of Ultrahigh Vacuum Grown Polycrystalline CuGaSe₂
p.319

Microanalysis of Epitaxially Grown Diamond Tip Array
p.325

Effects of Grain Boundary Structure and Chemistry on Electrical Activity in Polycrystalline Silicon
p.333

Local Electrical Properties of Non-Doped Polycrystalline Silicon Thin-Films Evaluated Using Conductive Atomic Force Microscopy
p.339

Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices
p.345

Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current
p.351

Study on Grain Boundary Formation in a Si Film Crystallized by Laser-Induced Periodic Temperature Distribution with a High Incident Angle
p.355

Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation
p.361

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Local Electrical Properties of Non-Doped Polycrystalline Silicon Thin-Films Evaluated Using Conductive Atomic Force Microscopy

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Solid State Phenomena (Volume 93)

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339-344

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https://doi.org/10.4028/www.scientific.net/SSP.93.339

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Online since:

June 2003

Authors:

Yoichiro Aya, Atsushi Andoh, Satoshi Yamasaki, Kenichiro Wakisaka

Keywords:

Conductive Atomic Force Microscopy, Excimer Laser Annealing, Grain Boundary, Polycrystalline Silicon, TEM

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