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HomeSolid State PhenomenaSolid State Phenomena Vol. 93Study on Grain Boundary Formation in a Si Film...

Study on Grain Boundary Formation in a Si Film Crystallized by Laser-Induced Periodic Temperature Distribution with a High Incident Angle

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

355-360

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.355

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Online since:

June 2003

Authors:

H. Kaki, Y. Nakata, Susumu Horita

Keywords:

Grain Boundary, Laser Annealing, Lateral Growth, Polycrystalline Silicon, Thin Film Transistor

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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