Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors

Kinichi Masuda-Jindo; R. Kikuchi; Seizo Obata; M. Menon

doi:10.4028/www.scientific.net/SSP.93.375

Paper Titles

Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current
p.351

Study on Grain Boundary Formation in a Si Film Crystallized by Laser-Induced Periodic Temperature Distribution with a High Incident Angle
p.355

Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation
p.361

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs
p.367

Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors
p.375

Molecular Dynamics Studies of Crystallization and Grain Boundary Formation in Silicon
p.381

Theoretical Study of the Atomic and Electronic Structure of Grain Boundaries in SiC
p.387

First-Principles Calculation of 3C-SiC(111)/Al Nano-Hetero Polar Interfaces
p.393

A Simple Method to Extract the Diffusion Length from the Output Parameters of Solar Cells - Application to Polycrystalline Silicon
p.399

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Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors

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Solid State Phenomena (Volume 93)

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375-380

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.375

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Online since:

June 2003

Authors:

Kinichi Masuda-Jindo, R. Kikuchi, Seizo Obata, M. Menon

Keywords:

Dislocation, Grain Boundary, Nanocrystalline Semiconductors, Quantum Wire, Tight Binding Molecular Dynamics

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