Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors

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Periodical:

Solid State Phenomena (Volume 93)

Edited by:

T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner

Pages:

375-380

DOI:

10.4028/www.scientific.net/SSP.93.375

Citation:

K. Masuda-Jindo et al., "Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors", Solid State Phenomena, Vol. 93, pp. 375-380, 2003

Online since:

June 2003

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$35.00

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