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HomeSolid State PhenomenaSolid State Phenomena Vol. 93Theoretical Study of the Atomic and Electronic...

Theoretical Study of the Atomic and Electronic Structure of Grain Boundaries in SiC

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

387-392

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.387

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Online since:

June 2003

Authors:

Masanori Kohyama, Koji Tanaka

Keywords:

Electron Microscopy, Electronic Structure, First-Principle Calculations, Grain Boundary, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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