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HomeSolid State PhenomenaSolid State Phenomena Vol. 93First-Principles Calculation of 3C-SiC(111)/Al...

First-Principles Calculation of 3C-SiC(111)/Al Nano-Hetero Polar Interfaces

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

393-398

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.393

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Online since:

June 2003

Authors:

Shingo Tanaka, Masanori Kohyama

Keywords:

First-Principle Calculations, Nano-Hetero Interface, Pseudopotentials, Schottky Barrier Height SBH, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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