Carbon-Induced Twinning in Multicrystalline Silicon

Hans Joachim Möller

doi:10.4028/www.scientific.net/SSP.95-96.181

Paper Titles

Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
p.141

Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate
p.149

Silicon Ribbons for Solar Cells
p.159

Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length
p.175

Carbon-Induced Twinning in Multicrystalline Silicon
p.181

Light-Induced Degradation in Crystalline Silicon Solar Cells
p.187

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations
p.197

Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells
p.205

Evaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical Diagnostics
p.211

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Carbon-Induced Twinning in Multicrystalline Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

181-186

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.181

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Online since:

September 2003

Authors:

Hans Joachim Möller

Keywords:

Twinning, Carbon Precipitation, EFG Ribbon Silicon, Multicrystalline Silicon

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References

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