Paper Titles

Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors
p.117

Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability
p.123

Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon
p.129

High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon
p.135

Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
p.141

Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate
p.149

Silicon Ribbons for Solar Cells
p.159

Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length
p.175

Carbon-Induced Twinning in Multicrystalline Silicon
p.181

HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Depth Resolved Defect Analysis by Micro-Raman...

Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology X

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

141-148

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.141

Citation:

Cite this paper

Online since:

September 2003

Authors:

Reinhart Job, Yue Ma, Yue Long Huang, Alexander G. Ulyashin, Wolfgang R. Fahrner, Marie France Beaufort, Jean François Barbot

Keywords:

Atomic Force Microscope (AFM), Hydrogen in Silicon, Hydrogen Related Defects, Plasma Hydrogenation, Platelets, Raman Spectroscopy, XTEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] R. Job, A.G. Ulyashin, W.R. Fahrner, Mater. Sci. Semicond. Proc. 4 (2001) p.257.

[2] R. Job, A.G. Ulyashin, W.R. Fahrner, Diffusion & Defect Data Pt. B: Solid State Phenom. 82-82 (2002) p.139.

[3] R. Job, M.F. Beaufort, J.F. Barbot, A.G. Ulyashin, W.R. Fahrner, MRS Symp. Proc. Series 719 (2002) p.217.

[4] A.W.R. Leitch, V. Alex, J. Weber, Solid State Commun. 105 (1998) p.215.

[5] A.W.R. Leitch, V. Alex, J. Weber, Phys. Rev. Lett. 81 (1998) p.421.

[6] N.M. Johnson, F.A. Ponce, R.A. Street, R.J. Nemanich, Phys. Rev. B 35 (1987) p.4166.

[7] B.P. Stoicheff, Can. J. Phys. 35 (1957) p.730.

[8] K.H. Hwang, E. Yoon, K.W. Whang, J.Y. Lee, Appl. Phys. Lett. 67 (1995) p.3590.

[9] K.H. Hwang, J.W. Park, E. Yoon, K.W. Whang, J.Y. Lee, J. Appl. Phys. 81 (1997) p.74.

[10] K.H. Hwang, E. Yoon, K.W. Whang, J.Y. Lee, J. Electrochem. Soc. 144 (1997) p.335.

[11] M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, E.E. Chaban, J. Vac. Sci. Technol. B 15 (1997) p.1065.

DOI: 10.1109/soi.1997.634964

[12] M. Bruel, Electron. Lett. 31 (1995) p.1201.

[13] A.G. Ulyashin, R. Job, W.R. Fahrner, D. Grambole, F. Herrmann, Diffusion & Defect Data Pt. B: Solid State Phenom. 2-82 (2002) p.315.

[14] R. Job, A.G. Ulyashin, W.R. Fahrner, Proc. 26th Annual Conference of the IEEE Industrial Electronics Society (IECON), Oct. 22nd - 28th , 2000, Nagoya, Japan (2000) p.1883.

DOI: 10.1109/iecon.2000.972563

[15] W.R. Fahrner, R. Job, A.G. Ulyashin, Proc. 1st IEEE-NANO Conference on Nanotechnology, Oct. 28th - 30th, 2001, Maui, Hawaii, USA (2001) p.282.

[16] P. Roca, I. Cabarrocas, S. Hamma, Thin Solid Films 337 (1999) p.23.

[17] A.G. Ulyashin, R. Job, W.R. Fahrner, O. Richard, H. Bender, C. Claeys, E. Simoen, D. Grambole, J. Phys.: Condens. Matter 14 (2002) p.13037.

DOI: 10.1088/0953-8984/14/48/349

[18] R. Job, W.R. Fahrner, N.M. Kazuchits, A.G. Ulyashin, MRS Symp. Proc. Series 513 (1998).