High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon

Abstract:

• Periodical: Solid State Phenomena (Volumes 95-96)
• Pages: 135-140
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.95-96.135
• Online since: September 2003
• Authors: J.H. Evans-Freeman, N. Abdulgader
• Keywords: Defect, Hydrogen, Ion Implantation, Laplace DLTS, Silicon

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