High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

135-140

DOI:

10.4028/www.scientific.net/SSP.95-96.135

Citation:

J.H. Evans-Freeman and N. Abdulgader, "High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon ", Solid State Phenomena, Vols. 95-96, pp. 135-140, 2004

Online since:

September 2003

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$35.00

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